| Name: | BarSiC Semiconductors LLC |
| Jurisdiction: | MISSISSIPPI |
| Business Type: | Limited Liability Company |
| Status: | Good Standing |
| Effective Date: | 14 Oct 2005 (20 years ago) |
| Business ID: | 879789 |
| ZIP code: | 39759 |
| County: | Oktibbeha |
| State of Incorporation: | MISSISSIPPI |
| Principal Office Address: | 209 Brook AveStarkville, MS 39759 |
| Name | Role | Address |
|---|---|---|
| Melnychuk, Galyna | Agent | 209 Brook Ave, Starkville, MS 39759 |
| Name | Role | Address |
|---|---|---|
| Galyna Melnychuk | Manager | 209 Brook Ave, Starkville, MS 39759 |
| Name | Role | Address |
|---|---|---|
| Galyna Melnychuk | President | 209 Brook Ave, Starkville, MS 39759 |
| Name | Role | Address |
|---|---|---|
| Yaroslav Koshka | Vice President | 209 Brook Ave, Starkville, MS 39759 |
| Type | Status | Filed Date | Description |
|---|---|---|---|
| Annual Report LLC | Filed | 2025-02-20 | Annual Report For BarSiC Semiconductors LLC |
| Annual Report LLC | Filed | 2024-01-30 | Annual Report For BarSiC Semiconductors LLC |
| Annual Report LLC | Filed | 2023-04-02 | Annual Report For BarSiC Semiconductors LLC |
| Annual Report LLC | Filed | 2022-03-18 | Annual Report For BarSiC Semiconductors LLC |
| Annual Report LLC | Filed | 2021-04-05 | Annual Report For BarSiC Semiconductors LLC |
| Annual Report LLC | Filed | 2020-02-17 | Annual Report For BarSiC Semiconductors LLC |
| Annual Report LLC | Filed | 2019-09-12 | Annual Report For BarSiC Semiconductors LLC |
| Notice to Dissolve/Revoke | Filed | 2019-08-22 | Notice to Dissolve/Revoke |
| Annual Report LLC | Filed | 2018-02-07 | Annual Report For BarSiC Semiconductors LLC |
| Annual Report LLC | Filed | 2017-04-10 | Annual Report For BarSiC Semiconductors LLC |
| FAIN | Awarding Agency | Assistance Listings | Start Date | End Date | Description | |||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 0839748 | National Science Foundation | 47.041 - ENGINEERING GRANTS | 2009-01-01 | 2009-06-30 | SBIR PHASE I: ION IMPLANTATION-FREE SIC DEVICE FABRICATION TECHNOLOGY BASED ON LOW-TEMPERATURE SELECTIVE EPITAXIAL GROWTH | |||||||||||||||||||||
|
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Date of last update: 20 Mar 2025
Sources: Mississippi Secretary of State
